PART |
Description |
Maker |
1SS344 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
1SS272 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
1SS300 |
DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
1SS387 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
KTK5132S KTK5132 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
KEC[KEC(Korea Electronics)]
|
KTK5131E |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
KEC[KEC(Korea Electronics)]
|
1SS360F EA08953 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
SCS226K |
Surface Mount Device Ultra High Speed Switching Diode
|
SeCoS Halbleitertechnologie GmbH
|
KDS226 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|